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IRF7480MTRPBF
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Fall Time (Typ) | 58 ns |
| Series | HEXFET®, StrongIRFET™ |
| Turn-Off Delay Time | 68 ns |
| Part Status | Active |
| Continuous Drain Current (ID) | 217A |
| Gate to Source Voltage (Vgs) | 20V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Pulsed Drain Current-Max (IDM) | 868A |
| Number of Terminations | 6 |
| DS Breakdown Voltage-Min | 40V |
| ECCN Code | EAR99 |
| Avalanche Energy Rating (Eas) | 206 mJ |
| RoHS Status | ROHS3 Compliant |
| Technology | MOSFET (Metal Oxide) |
| Lead Free | Lead Free |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-XBCC-N6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 96W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 21 ns |
| FET Type | N-Channel |
| Factory Lead Time | 10 Weeks |
| Transistor Application | SWITCHING |
| Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.2m Ω @ 132A, 10V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 3.9V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6680pF @ 25V |
| Package / Case | DirectFET™ Isometric ME |
| Number of Pins | 10 |
| Current - Continuous Drain (Id) @ 25°C | 217A Tc |
| Transistor Element Material | SILICON |
| Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
| Operating Temperature | -55°C~150°C TJ |
| Rise Time | 70ns |
| Packaging | Tape & Reel (TR) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Published | 2007 |
See Relate Datesheet