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  • IRF7488PBF

IRF7488PBF

MOSFET N-CH 80V 6.3A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7488PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET N-CH 80V 6.3A 8-SOIC (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.3A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.3A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 6.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 50A
Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 96 mJ
Nominal Vgs 4 V
Height 1.4986mm
Length 4.9784mm
Width 4.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet