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IRF7504TRPBF

MOSFET 2P-CH 20V 1.7A MICRO8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7504TRPBF
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: PDF
  • Stock: 259
  • Description: MOSFET 2P-CH 20V 1.7A MICRO8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Resistance 270mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating -1.7A
Base Part Number IRF7504PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9.1 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -1.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 9.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 860μm
Length 3mm
Width 3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet