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IRF7607TRPBF

MOSFET N-CH 20V 6.5A MICRO8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7607TRPBF
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: PDF
  • Stock: 166
  • Description: MOSFET N-CH 20V 6.5A MICRO8 (Kg)

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Details

Tags

Parameters
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.5A
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 50A
Height 860μm
Length 3mm
Width 3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet