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  • IRF7739L2TRPBF

IRF7739L2TRPBF

MOSFET N-CH 40V DIRECTFET L8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7739L2TRPBF
  • Package: DirectFET™ Isometric L8
  • Datasheet: PDF
  • Stock: 430
  • Description: MOSFET N-CH 40V DIRECTFET L8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 11
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e1
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N9
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Ta 375A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 71ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 375A
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 270 mJ
Height 508μm
Length 9.144mm
Width 7.112mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet