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  • IRF7807ZTRPBF

IRF7807ZTRPBF

IRF7807ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7807ZTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 756
  • Description: IRF7807ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 13.8m Ω @ 11A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Package / Case 8-SOIC (0.154, 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C 11A Ta
Number of Pins 8
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Operating Temperature -55°C~150°C TJ
Rise Time 6.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Packaging Tape & Reel (TR)
Published 2005
Vgs (Max) ±20V
Series HEXFET®
Fall Time (Typ) 3.1 ns
JESD-609 Code e3
Turn-Off Delay Time 10 ns
Part Status Active
Continuous Drain Current (ID) 11A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Number of Terminations 8
Drain to Source Breakdown Voltage 30V
ECCN Code EAR99
Nominal Vgs 1.8 V
Resistance 8.2MOhm
Terminal Finish Matte Tin (Sn)
Height 1.4986mm
Voltage - Rated DC 30V
Length 4.9784mm
Technology MOSFET (Metal Oxide)
Width 3.9878mm
Terminal Position DUAL
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Terminal Form GULL WING
Lead Free Contains Lead, Lead Free
Peak Reflow Temperature (Cel) 260
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 12 Weeks
Mount Surface Mount
See Relate Datesheet