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IRF7809AVTRPBF

MOSFET N-CH 30V 13.3A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7809AVTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 988
  • Description: MOSFET N-CH 30V 13.3A 8-SOIC (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 13.3A
Number of Elements 1
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3780pF @ 16V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Factory Lead Time 12 Weeks
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 13.3A
Contact Plating Tin
Threshold Voltage 1V
Mount Surface Mount
Gate to Source Voltage (Vgs) 12V
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 30V
Package / Case 8-SOIC (0.154, 3.90mm Width)
Dual Supply Voltage 30V
Nominal Vgs 1 V
Number of Pins 8
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
Transistor Element Material SILICON
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Lead Free Contains Lead, Lead Free
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 9MOhm
Voltage - Rated DC 30V
See Relate Datesheet