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IRF7820TRPBF

IRF7820TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7820TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 479
  • Description: IRF7820TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Transistor Element Material SILICON
Turn-Off Delay Time 14 ns
Operating Temperature -55°C~150°C TJ
Continuous Drain Current (ID) 3.7A
Packaging Tape & Reel (TR)
Threshold Voltage 4V
Published 2012
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 200V
Series HEXFET®
Part Status Active
Nominal Vgs 4 V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
REACH SVHC No SVHC
Number of Terminations 8
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Factory Lead Time 12 Weeks
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Mount Surface Mount
Rise Time 3.2ns
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 200V
See Relate Datesheet