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  • IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7834PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 469
  • Description: MOSFET N-CH 30V 19A 8-SOIC (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 19A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 14.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 25 mJ
Nominal Vgs 2.25 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Discontinued
See Relate Datesheet