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IRF7854TRPBF

IRF7854TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7854TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 604
  • Description: IRF7854TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V
Factory Lead Time 12 Weeks
Current - Continuous Drain (Id) @ 25°C 10A Ta
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Mounting Type Surface Mount
Rise Time 8.5ns
Package / Case 8-SOIC (0.154, 3.90mm Width)
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Pins 8
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 8.6 ns
Packaging Tape & Reel (TR)
Published 2006
Turn-Off Delay Time 15 ns
Series HEXFET®
JESD-609 Code e3
Continuous Drain Current (ID) 10A
Part Status Active
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 79A
Height 1.4986mm
Number of Terminations 8
Length 4.9784mm
ECCN Code EAR99
Width 3.9878mm
Radiation Hardening No
Terminal Finish MATTE TIN
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet