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  • IRF8010PBF

IRF8010PBF

IRF8010PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8010PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 579
  • Description: IRF8010PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Elements 1
Power Dissipation-Max 260W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 260W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3830pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 4V
Factory Lead Time 12 Weeks
JEDEC-95 Code TO-220AB
Contact Plating Tin
Gate to Source Voltage (Vgs) 20V
Mount Through Hole
Drain Current-Max (Abs) (ID) 75A
Mounting Type Through Hole
Drain to Source Breakdown Voltage 100V
Package / Case TO-220-3
Dual Supply Voltage 100V
Number of Pins 3
Recovery Time 150 ns
Nominal Vgs 4 V
Transistor Element Material SILICON
Height 8.763mm
Operating Temperature -55°C~175°C TJ
Length 10.5156mm
Width 4.69mm
Packaging Tube
Published 2002
Radiation Hardening No
REACH SVHC No SVHC
Series HEXFET®
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 15Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 80A
See Relate Datesheet