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  • IRF8302MTRPBF

IRF8302MTRPBF

MOSFET N-CH 30V 31A MX


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8302MTRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 459
  • Description: MOSFET N-CH 30V 31A MX (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Transistor Element Material SILICON
Manufacturer Package Identifier MG-WDSON-5
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.8W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6030pF @ 15V
Current - Continuous Drain (Id) @ 25°C 31A Ta 190A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 4.5V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 1.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 260 mJ
Max Junction Temperature (Tj) 150°C
Height 700μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet