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IRF8306MTRPBF

MOSFET N-CH 30V 23A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8306MTRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 791
  • Description: MOSFET N-CH 30V 23A DIRECTFET (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 2.1W Ta 75W Tc
Power Dissipation 75W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 140A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 34ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Body)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet