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  • IRF8327STRPBF

IRF8327STRPBF

MOSFET N-CH 30V 14A SQ


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8327STRPBF
  • Package: DirectFET™ Isometric SQ
  • Datasheet: PDF
  • Stock: 377
  • Description: MOSFET N-CH 30V 14A SQ (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 8.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 9.3 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0073Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 62 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
See Relate Datesheet