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  • IRF8707GTRPBF

IRF8707GTRPBF

MOSFET N-CH 30V 11A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8707GTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 472
  • Description: MOSFET N-CH 30V 11A 8-SOIC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Continuous Drain Current (ID) 11A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Height 1.4986mm
Length 4.9784mm
Factory Lead Time 10 Weeks
Mount Surface Mount
Width 3.9878mm
Mounting Type Surface Mount
Radiation Hardening No
REACH SVHC No SVHC
Package / Case 8-SOIC (0.154, 3.90mm Width)
RoHS Status ROHS3 Compliant
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 6.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Rise Time 7.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 7.3 ns
See Relate Datesheet