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  • IRF8736PBF

IRF8736PBF

IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF8736PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 604
  • Description: IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2315pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 24 ns
Nominal Vgs 1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 4.8MOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 12 ns
See Relate Datesheet