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  • IRF9335PBF

IRF9335PBF

IRF9335PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF9335PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 671
  • Description: IRF9335PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 9.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 19ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) -5.4A
Threshold Voltage -1.8V
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.059Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 43A
Recovery Time 21 ns
Nominal Vgs -1.8 V
Height 1.57mm
Length 4.98mm
Width 3.99mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet