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  • IRF9388PBF

IRF9388PBF

MOSFET P-CH 30V 12A 8-SO


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF9388PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 763
  • Description: MOSFET P-CH 30V 12A 8-SO (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 19 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 12A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Vgs (Max) ±25V
Fall Time (Typ) 66 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 96A
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet