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  • IRF9510PBF

IRF9510PBF

MOSFET P-CH 100V 4A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF9510PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 137
  • Description: MOSFET P-CH 100V 4A TO-220AB (Kg)

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -4A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Power Dissipation 43W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -4A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 200pF
Recovery Time 160 ns
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs -4 V
Height 19.89mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet