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  • IRF9540NLPBF

IRF9540NLPBF

MOSFET P-CH 100V 23A TO262-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF9540NLPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 808
  • Description: MOSFET P-CH 100V 23A TO262-3 (Kg)

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Details

Tags

Parameters
Series HEXFET®
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 92A
JESD-609 Code e3
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 84 mJ
Part Status Active
Nominal Vgs 4 V
Height 9.65mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10.668mm
Number of Terminations 3
Width 4.826mm
Termination Through Hole
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
ECCN Code EAR99
Resistance 117mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Factory Lead Time 12 Weeks
Current - Continuous Drain (Id) @ 25°C 23A Tc
Mount Through Hole
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Mounting Type Through Hole
Rise Time 67ns
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Pins 3
Vgs (Max) ±20V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 51 ns
Turn-Off Delay Time 40 ns
Packaging Tube
Continuous Drain Current (ID) -23A
Threshold Voltage 4V
Published 2005
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet