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  • IRFB11N50APBF

IRFB11N50APBF

MOSFET N-CH 500V 11A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFB11N50APBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 549
  • Description: MOSFET N-CH 500V 11A TO-220AB (Kg)

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Fall Time (Typ) 28 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 1.423nF
Factory Lead Time 11 Weeks
Mount Through Hole
Drain to Source Resistance 520mOhm
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Rds On Max 520 mΩ
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Nominal Vgs 4 V
Packaging Tube
Published 2009
Height 9.01mm
Part Status Active
Length 10.41mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 520mOhm
Width 4.7mm
Max Operating Temperature 150°C
Radiation Hardening No
Min Operating Temperature -55°C
REACH SVHC Unknown
Voltage - Rated DC 500V
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Current Rating 11A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
See Relate Datesheet