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  • IRFB18N50KPBF

IRFB18N50KPBF

MOSFET N-CH 500V 17A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFB18N50KPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 533
  • Description: MOSFET N-CH 500V 17A TO-220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 290mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 220W Tc
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Input Capacitance 2.83nF
Drain to Source Resistance 290mOhm
Rds On Max 290 mΩ
Nominal Vgs 5 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet