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  • IRFB3006GPBF

IRFB3006GPBF

MOSFET N-CH 60V 195A TO220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB3006GPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 535
  • Description: MOSFET N-CH 60V 195A TO220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 170A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8970pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 182ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 189 ns
Turn-Off Delay Time 118 ns
Continuous Drain Current (ID) 270mA
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 195A
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 1080A
Height 16.51mm
Length 10.668mm
Width 4.826mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet