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  • IRFB31N20DPBF

IRFB31N20DPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB31N20DPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 863
  • Description: Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 82mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 31A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 3.1W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 5.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 420 mJ
Recovery Time 300 ns
Nominal Vgs 5.5 V
Height 8.763mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet