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  • IRFB3306GPBF

IRFB3306GPBF

IRFB3306GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB3306GPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 261
  • Description: IRFB3306GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 40 ns
Factory Lead Time 10 Weeks
Continuous Drain Current (ID) 160A
JEDEC-95 Code TO-220AB
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain-source On Resistance-Max 0.0042Ohm
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 60V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Pulsed Drain Current-Max (IDM) 620A
Nominal Vgs 4 V
Height 16.51mm
Published 2009
Length 10.668mm
Series HEXFET®
Part Status Not For New Designs
Width 4.826mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
REACH SVHC No SVHC
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
See Relate Datesheet