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  • IRFB33N15DPBF

IRFB33N15DPBF

IRFB33N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB33N15DPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 190
  • Description: IRFB33N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Resistance 56Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 33A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 23 ns
Factory Lead Time 14 Weeks
Continuous Drain Current (ID) 33A
Mount Through Hole
Mounting Type Through Hole
Threshold Voltage 5.5V
Package / Case TO-220-3
JEDEC-95 Code TO-220AB
Number of Pins 3
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 30V
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Packaging Tube
Nominal Vgs 5.5 V
Published 2000
Height 15.24mm
Series HEXFET®
Length 10.5156mm
Part Status Not For New Designs
Width 4.69mm
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Number of Terminations 3
Lead Free Contains Lead, Lead Free
ECCN Code EAR99
See Relate Datesheet