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  • IRFB4019PBF

IRFB4019PBF

IRFB4019PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB4019PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 263
  • Description: IRFB4019PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 4.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Recovery Time 96 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4.9 V
Height 19.8mm
Factory Lead Time 12 Weeks
Length 10.6426mm
Mount Through Hole
Width 4.82mm
Radiation Hardening No
Mounting Type Through Hole
REACH SVHC No SVHC
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Number of Pins 3
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 95MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80mW
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 95m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.8 ns
See Relate Datesheet