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  • IRFB4020PBF

IRFB4020PBF

MOSFET N-CH 200V 18A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB4020PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 594
  • Description: MOSFET N-CH 200V 18A TO-220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Termination Through Hole
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 52A
Dual Supply Voltage 200V
Resistance 100MOhm
Avalanche Energy Rating (Eas) 94 mJ
Subcategory FET General Purpose Power
Recovery Time 120 ns
Nominal Vgs 4.9 V
Height 9.02mm
Technology MOSFET (Metal Oxide)
Length 10.6426mm
Number of Elements 1
Width 4.82mm
Radiation Hardening No
Power Dissipation-Max 100W Tc
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Element Configuration Single
Factory Lead Time 12 Weeks
Operating Mode ENHANCEMENT MODE
Mount Through Hole
Power Dissipation 100mW
Mounting Type Through Hole
Turn On Delay Time 7.8 ns
Package / Case TO-220-3
FET Type N-Channel
Number of Pins 3
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Rds On (Max) @ Id, Vgs 100m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 50V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Published 2006
Rise Time 12ns
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±20V
Fall Time (Typ) 6.3 ns
Number of Terminations 3
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 4.9V
See Relate Datesheet