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  • IRFB4110PBF

IRFB4110PBF

IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB4110PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 530
  • Description: IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 180A
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 88 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 670A
Dual Supply Voltage 100V
Recovery Time 75 ns
Nominal Vgs 4 V
Height 16.51mm
Length 10.66mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet