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  • IRFB4228PBF

IRFB4228PBF

IRFB4228PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB4228PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 499
  • Description: IRFB4228PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 83A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 83A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Input Capacitance 4.53nF
Recovery Time 110 ns
Drain to Source Resistance 15mOhm
Rds On Max 15 mΩ
Nominal Vgs 30 V
Height 16.51mm
Length 10.6426mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 15MOhm
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Voltage - Rated DC -150V
Technology MOSFET (Metal Oxide)
Current Rating -83A
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 18 ns
FET Type N-Channel
See Relate Datesheet