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  • IRFB4233PBF

IRFB4233PBF

MOSFET N-CH 230V 56A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFB4233PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 392
  • Description: MOSFET N-CH 230V 56A TO-220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 370W
Turn On Delay Time 31 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drain to Source Voltage (Vdss) 230V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 230V
Dual Supply Voltage 276V
Input Capacitance 5.51nF
Drain to Source Resistance 37mOhm
Rds On Max 37 mΩ
Nominal Vgs 5 V
Height 16.51mm
Length 10.6426mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
See Relate Datesheet