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  • IRFBA1405PPBF

IRFBA1405PPBF

IRFBA1405PPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFBA1405PPBF
  • Package: TO-273AA
  • Datasheet: PDF
  • Stock: 617
  • Description: IRFBA1405PPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 101A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 174A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 190ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 174A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 680A
Avalanche Energy Rating (Eas) 560 mJ
Height 15mm
Length 10.9982mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-273AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5MOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 174A
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet