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  • IRFBA90N20DPBF

IRFBA90N20DPBF

IRFBA90N20DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFBA90N20DPBF
  • Package: TO-273AA
  • Datasheet: PDF
  • Stock: 411
  • Description: IRFBA90N20DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-273AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23Ohm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 98A
Number of Elements 1
Power Dissipation-Max 650W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 650W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 59A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 98A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 960 mJ
Nominal Vgs 5 V
Height 15.0114mm
Length 10.9982mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet