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  • IRFBC40PBF

IRFBC40PBF

Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFBC40PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 727
  • Description: Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Number of Elements 1
Number of Channels 1
Voltage 600V
Power Dissipation-Max 125W Tc
Element Configuration Single
Current 62A
Power Dissipation 125W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.3nF
Recovery Time 940 ns
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet