Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIHF7N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Powers | Single | 31W | 13 ns | 2V | 31W Tc | 7A | 24 ns | N-Channel | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 680pF @ 100V | 40nC @ 10V | 13ns | 14 ns | 20V | 7A | 7A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SIHF12N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 380mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 33W | 14 ns | 2V | 380mOhm | TO-220 Full Pack | 33W Tc | 12A | 35 ns | N-Channel | 380mOhm @ 6A, 10V | 4V @ 250μA | 937pF @ 100V | 58nC @ 10V | 19ns | 19 ns | 20V | 600V | 12A Tc | 600V | 937pF | 10V | ±30V | 380 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
SIHB6N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2014 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 600mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | Single | 78W | 14 ns | 2V | 78W Tc | 7A | SWITCHING | 30 ns | SILICON | N-Channel | 600m Ω @ 3A, 10V | 4V @ 250μA | 820pF @ 100V | 48nC @ 10V | 12ns | 20 ns | 20V | 650V | 7A | 7A Tc | 56 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRFPS40N60KPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 150°C | -55°C | 16.1mm | ROHS3 Compliant | Lead Free | No | 3 | TO-274AA | Unknown | 20.8mm | 5.3mm | 130MOhm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 570W | 47 ns | 5V | 130mOhm | SUPER-247™ (TO-274AA) | 570W Tc | 40A | 97 ns | N-Channel | 130mOhm @ 24A, 10V | 5V @ 250μA | 7970pF @ 25V | 330nC @ 10V | 110ns | 60 ns | 30V | 600V | 40A Tc | 600V | 7.97nF | 10V | ±30V | 130 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRF820PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 2.5A | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 3Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 50W | 8 ns | 4V | 3Ohm | TO-220AB | 50W Tc | 520 ns | 2.5A | 33 ns | N-Channel | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 360pF @ 25V | 24nC @ 10V | 8.6ns | 16 ns | 20V | 500V | 4 V | 2.5A Tc | 500V | 360pF | 10V | ±20V | 3 Ω | |||||||||||||||||||||||||||||||||||||
SI3460DDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 28mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 1.7W | 6 ns | 400mV | 1.7W Ta 2.7W Tc | 7.9A | SWITCHING | 20V | 21 ns | SILICON | N-Channel | 28m Ω @ 5.1A, 4.5V | 1V @ 250μA | 666pF @ 10V | 18nC @ 8V | 11ns | 8 ns | 8V | 7.9A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SI8812DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 44 Weeks | Surface Mount | Digi-Reel® | 2016 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | 4 | 4-UFBGA | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | 1 | Single | 900mW | 500mW Ta | 3.2A | SWITCHING | 0.065Ohm | 20V | SILICON | N-Channel | 59m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 8V | 20V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||
SI2303CDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | 1.02mm | 1.4mm | 190MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 2.3W | 36 ns | 2.3W Tc | 1.9A | SWITCHING | 12 ns | SILICON | P-Channel | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 155pF @ 15V | 8nC @ 10V | 37ns | 37 ns | 20V | -30V | 2.7A | 2.7A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF9Z30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 140mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 74W | 12 ns | -4V | 74W Tc | 18A | SWITCHING | 21 ns | SILICON | P-Channel | 140m Ω @ 9.3A, 10V | 4V @ 250μA | 900pF @ 25V | 39nC @ 10V | 110ns | 64 ns | 20V | -50V | 18A Tc | 50V | 60A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFP9140PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 175°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | -21A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 200mOhm | Through Hole | 38.000013g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 180W | 16 ns | -4V | 200mOhm | TO-247-3 | 180W Tc | 260 ns | -21A | 34 ns | P-Channel | 200mOhm @ 13A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | -100V | -4 V | 21A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||||
IRFBC40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 6.2A | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1.2Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | 62A | 1 | 600V | 1 | Single | 125W | 13 ns | 4V | 1.2Ohm | TO-220AB | 125W Tc | 940 ns | 6.2A | 55 ns | N-Channel | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1300pF @ 25V | 60nC @ 10V | 18ns | 20 ns | 20V | 600V | 4 V | 6.2A Tc | 600V | 1.3nF | 10V | ±20V | 1.2 Ω | ||||||||||||||||||||||||||||||||||
IRFI510GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 175°C | -55°C | 10.63mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack, Isolated Tab | No SVHC | 9.8mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 27W | 6.9 ns | 4V | 540mOhm | TO-220-3 | 27W Tc | 4.5A | 15 ns | N-Channel | 540mOhm @ 2.7A, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 4 V | 4.5A Tc | 100V | 180pF | 10V | ±20V | 540 mΩ | ||||||||||||||||||||||||||||||||||||||||||
SUP70060E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | 2017 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 200W Tc | 131A | SWITCHING | 0.0064Ohm | 100V | SILICON | N-Channel | 5.8m Ω @ 30A, 10V | 4V @ 250μA | 3330pF @ 50V | 81nC @ 10V | 131A Tc | 100V | 240A | 125 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SQM200N04-1M7L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Unknown | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G6 | 1 | 1 | Single | 22 ns | 2V | 375W Tc | 200A | 40V | 70 ns | SILICON | N-Channel | 1.7m Ω @ 30A, 10V | 2.5V @ 250μA | 11168pF @ 20V | 291nC @ 10V | 17ns | 16 ns | 20V | 200A Tc | 40V | 600A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRL510PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 5.6A | No | 3 | TO-220-3 | No SVHC | 9.01mm | 4.7mm | 540mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 43W | 9.3 ns | 2V | 540mOhm | TO-220AB | 43W Tc | 130 ns | 5.6A | 16 ns | N-Channel | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 250pF @ 25V | 6.1nC @ 5V | 47ns | 18 ns | 10V | 100V | 2 V | 5.6A Tc | 100V | 250pF | 4V 5V | ±10V | 540 mΩ | ||||||||||||||||||||||||||||||||||||
SQ3427AEEV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | unknown | 1.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 5W | 8 ns | -2V | 5W Tc | -5.3A | 175°C | 0.095Ohm | 26 ns | SILICON | P-Channel | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 1000pF @ 30V | 22nC @ 10V | 24ns | 33 ns | 20V | -60V | 5.3A Tc | 60V | 75 pF | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SIRA14DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2011 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.969mm | ROHS3 Compliant | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.0668mm | 5.0038mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | R-PDSO-F5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.6W | 15 ns | 1.1V | 3.6W Ta 31.2W Tc | 20A | SWITCHING | 18 ns | SILICON | N-Channel | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 1450pF @ 15V | 29nC @ 10V | 16 ns | 20V | 30V | 58A Tc | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
SIS406DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 20 ns | 1.5W Ta | 9A | SWITCHING | 25 ns | SILICON | N-Channel | 11m Ω @ 12A, 10V | 3V @ 250μA | 1100pF @ 15V | 28nC @ 10V | 12ns | 12 ns | 25V | 30V | 9A | 9A Ta | 50A | 20 mJ | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||
SI4812BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | LITTLE FOOT® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 1.4W | 15 ns | 1V | 1.4W Ta | 7.3A | 30V | 20 ns | SILICON | N-Channel | 16m Ω @ 9.5A, 10V | 3V @ 250μA | 13nC @ 5V | 13ns | 8 ns | 20V | 7.3A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIRA24DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 5W | 12 ns | 62.5W Tc | 44.5A | 150°C | 18 ns | N-Channel | 1.4m Ω @ 15A, 10V | 2.1V @ 250μA | 2650pF @ 10V | 26nC @ 4.5V | 25V | 60A Tc | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3458BDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 100mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Power | 1 | Single | 2W | 5 ns | 3V | 2W Ta 3.3W Tc | 3.2A | SWITCHING | 18 ns | SILICON | N-Channel | 100m Ω @ 3.2A, 10V | 3V @ 250μA | 350pF @ 30V | 11nC @ 10V | 12ns | 10 ns | 20V | 60V | 3 V | 4.1A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SI4174DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 9.5MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 14 ns | 1V | 2.5W Ta 5W Tc | 17A | SWITCHING | 19 ns | SILICON | N-Channel | 9.5m Ω @ 10A, 10V | 2.2V @ 250μA | 985pF @ 15V | 27nC @ 10V | 12ns | 9 ns | 20V | 30V | 17A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIR668DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 6.25W | 17 ns | 104W Tc | 23.2A | 150°C | 30 ns | N-Channel | 4.8m Ω @ 20A, 10V | 3.4V @ 250μA | 5400pF @ 50V | 83nC @ 7.5V | 20V | 100V | 95A Tc | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLD014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | 1.7A | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 200mOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | 1 | Single | 1.3W | 9.3 ns | 2V | 200mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 130 ns | 1.7A | 17 ns | N-Channel | 200mOhm @ 1A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 110 ns | 10V | 60V | 1.7A Ta | 60V | 400pF | 4V 5V | ±10V | 200 mΩ | |||||||||||||||||||||||||||||||||||||||
IRF730STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 260 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.1W | 10 ns | 3.1W Ta 74W Tc | 5.5A | SWITCHING | 1Ohm | 38 ns | SILICON | N-Channel | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 700pF @ 25V | 38nC @ 10V | 15ns | 14 ns | 20V | 400V | 5.5A Tc | 22A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF9540STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 8 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 5.08mm | 9.65mm | 200mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.7W | 16 ns | -4V | 200mOhm | D2PAK | 3.7W Ta 150W Tc | -19A | 175°C | 34 ns | P-Channel | 200mOhm @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | -100V | -2 V | 19A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||
SI7623DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S-PDSO-C5 | 1 | 1 | DRAIN | Single | 3.7W | -400mV | 3.7W Ta 52W Tc | -35A | SWITCHING | SILICON | P-Channel | 3.8m Ω @ 20A, 10V | 1.5V @ 250μA | 5460pF @ 10V | 180nC @ 10V | 12V | -20V | 35A Tc | 20V | 20 mJ | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
SI4122DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.5MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 3W | 42 ns | 2.5V | 3W Ta 6W Tc | 27.2A | SWITCHING | 45 ns | SILICON | N-Channel | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 4200pF @ 20V | 95nC @ 10V | 34ns | 28 ns | 25V | 40V | 27.2A Tc | 225 pF | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
SI4497DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.75mm | 3.3mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3.5W | 19 ns | -2.5V | 3.5W Ta 7.8W Tc | -24.8A | 150°C | SWITCHING | 115 ns | SILICON | P-Channel | 3.3m Ω @ 20A, 10V | 2.5V @ 250μA | 9685pF @ 15V | 285nC @ 10V | 13ns | 25 ns | 20V | -30V | -1 V | 36A | 36A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SISS40DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | ThunderFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8S | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N5 | 1 | 1 | DRAIN | Single | 3.7W | 14 ns | 3.7W Ta 52W Tc | 36.5A | SWITCHING | 14 ns | SILICON | N-Channel | 21m Ω @ 10A, 10V | 3.5V @ 250μA | 845pF @ 50V | 24nC @ 10V | 5ns | 5 ns | 20V | 100V | 36.5A Tc | 60A | 20 mJ | 6V 10V | ±20V |
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