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IRFBF30PBF

Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFBF30PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 667
  • Description: Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.2nF
Drain to Source Resistance 3.7Ohm
Rds On Max 3.7 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.7Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
See Relate Datesheet