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  • IRFD113PBF

IRFD113PBF

Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFD113PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 879
  • Description: Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 2
JESD-30 Code R-PDIP-T2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 800mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 800mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.8Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 25 pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
See Relate Datesheet