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IRFD123

SMALL SIGNAL N-CHANNEL MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-IRFD123
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 681
  • Description: SMALL SIGNAL N-CHANNEL MOSFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
DS Breakdown Voltage-Min 80V
RoHS Status Non-RoHS Compliant
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drain Current-Max (Abs) (ID) 1.1A
Drain-source On Resistance-Max 0.4Ohm
See Relate Datesheet