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  • IRFD9110PBF

IRFD9110PBF

MOSFET P-CH 100V 0.7A 4-DIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFD9110PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 684
  • Description: MOSFET P-CH 100V 0.7A 4-DIP (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating -700mA
Pin Count 3
JESD-30 Code R-PDIP-T3
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 420mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 700mA Ta
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -700mA
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 5.6A
Nominal Vgs -4 V
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet