All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIR418DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 5W | 19 ns | 2.4V | 39W Tc | 40A | SWITCHING | 0.005Ohm | 32 ns | SILICON | N-Channel | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 2410pF @ 20V | 75nC @ 10V | 73ns | 12 ns | 20V | 40V | 2.4 V | 23.5A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7106DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 3.3mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.3mm | 6.2mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 25 ns | 1.5W Ta | 19.5A | SWITCHING | 50 ns | SILICON | N-Channel | 6.2m Ω @ 19.5A, 4.5V | 1.5V @ 250μA | 27nC @ 4.5V | 15ns | 15 ns | 12V | 20V | 20V | 12.5A Ta | 60A | 45 mJ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SIRA10DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 5W | 20 ns | 1.1V | 5W Ta 40W Tc | 30A | SWITCHING | 0.0037Ohm | 27 ns | SILICON | N-Channel | 3.7m Ω @ 10A, 10V | 2.2V @ 250μA | 2425pF @ 15V | 51nC @ 10V | 20 ns | 20V | 30V | 60A | 60A Tc | 20 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| SISS98DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 57W Tc | N-Channel | 105m Ω @ 7A, 10V | 4V @ 250μA | 608pF @ 100V | 14nC @ 7.5V | 14.1A Tc | 200V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA82EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.0082Ohm | 80V | SILICON | N-Channel | 8.2m Ω @ 10A, 10V | 2.5V @ 250μA | 3000pF @ 25V | 60nC @ 10V | 60A | 60A Tc | 80V | 120A | 62 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8409DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 1.6mm | ROHS3 Compliant | Lead Free | No | 4 | 4-XFBGA, CSPBGA | 360μm | 1.6mm | 46MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 40 | 4 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 1.47W | 20 ns | 1.47W Ta | -6.3A | SWITCHING | 140 ns | SILICON | P-Channel | 46m Ω @ 1A, 4.5V | 1.4V @ 250μA | 26nC @ 4.5V | 35ns | 35 ns | 12V | -30V | 4.6A Ta | 30V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SIR696DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 104W Tc | N-Channel | 11.5m Ω @ 20A, 10V | 4.5V @ 250μA | 1410pF @ 75V | 38nC @ 10V | 60A Tc | 125V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA20DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 6.25W Ta 104W Tc | N-Channel | 0.58m Ω @ 20A, 10V | 2.1V @ 250μA | 10850pF @ 10V | 200nC @ 10V | 81.7A Ta 100A Tc | 25V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 180mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 130W | 14 ns | 4V | 3.1W Ta 130W Tc | 18A | SWITCHING | 45 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 4 V | 18A Tc | 72A | 580 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFD9110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.2738mm | ROHS3 Compliant | Lead Free | -700mA | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 1.2Ohm | Through Hole | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 3 | R-PDIP-T3 | Other Transistors | 1 | DRAIN | Single | 1.3W | 10 ns | -4V | 1.3W Ta | -700mA | SWITCHING | 15 ns | SILICON | P-Channel | 1.2 Ω @ 420mA, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 27 ns | 20V | 100V | -4 V | 0.7A | 700mA Ta | 5.6A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI3474DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | 1 | Single | 2W | 8 ns | 3.6W Tc | 2.8A | 150°C | SWITCHING | 10 ns | SILICON | N-Channel | 126m Ω @ 2A, 10V | 3V @ 250μA | 196pF @ 50V | 10.4nC @ 10V | 68ns | 20 ns | 20V | 100V | 3.8A | 3.8A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI2305CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 35mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 58A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 8V | 1 | Single | 960mW | 20 ns | -400mV | 960mW Ta 1.7W Tc | -4.4A | 150°C | SWITCHING | 40 ns | SILICON | P-Channel | 35m Ω @ 4.4A, 4.5V | 1V @ 250μA | 960pF @ 4V | 30nC @ 8V | 20ns | 20 ns | 8V | -8V | 5.8A Tc | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI3443CDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 60mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 3.2W | 27 ns | -600mV | 2W Ta 3.2W Tc | 3.9A | SWITCHING | 30 ns | SILICON | P-Channel | 60m Ω @ 4.7A, 4.5V | 1.5V @ 250μA | 610pF @ 10V | 12.4nC @ 5V | 59ns | 11 ns | 12V | -20V | -600 mV | 5.97A | 5.97A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI1032X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.7mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | SC-89, SOT-490 | Unknown | 800μm | 950μm | 5Ohm | Surface Mount | 29.993795mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 300mW | 50 ns | 700mV | 300mW Ta | 200mA | SWITCHING | 20V | 50 ns | SILICON | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 0.75nC @ 4.5V | 25ns | 25 ns | 6V | 0.2A | 200mA Ta | 20V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| SI2301BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 100MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 700mW | 20 ns | -950mV | 700mW Ta | -2.2A | 30 ns | SILICON | P-Channel | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 375pF @ 6V | 10nC @ 4.5V | 40ns | 40 ns | 8V | -20V | -950 mV | 2.2A Ta | 20V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SQ2308CES-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | unknown | 1.12mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 2W | 4 ns | 2V | 2W Tc | 2.3A | 175°C | 12 ns | SILICON | N-Channel | 150m Ω @ 2.3A, 10V | 2.5V @ 250μA | 205pF @ 30V | 5.3nC @ 10V | 20V | 60V | 2.3A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414AEN-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | PowerPAK® 1212-8 | No SVHC | unknown | 1.17mm | 22mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | SQ7414AEN-T1_GE3 | NOT SPECIFIED | NOT SPECIFIED | 1 | 62W | 9 ns | 2V | 62W Tc | 16A | 175°C | 20 ns | N-Channel | 26m Ω @ 5.7A, 10V | 2.5V @ 250μA | 980pF @ 30V | 24nC @ 10V | 20V | 60V | 16A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3464DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1.1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | 2W | 3 ns | 2W Ta 3.6W Tc | 8A | SWITCHING | 0.024Ohm | 22 ns | SILICON | N-Channel | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 1065pF @ 10V | 18nC @ 5V | 12ns | 8 ns | 8V | 20V | 450 mV | 8A | 8A Tc | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIA436DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2013 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.5W | 11 ns | 350mV | 3.5W Ta 19W Tc | 12A | SWITCHING | 0.0094Ohm | 30 ns | SILICON | N-Channel | 9.4m Ω @ 15.7A, 4.5V | 800mV @ 250μA | 1508pF @ 4V | 25.2nC @ 5V | 10ns | 8 ns | 5V | 8V | 12A Tc | 50A | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
| SI8851EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 30 | EAR99 | ROHS3 Compliant | 30 | 30-XFBGA | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | BALL | 260 | 40 | SI8851 | 1 | SINGLE WITH BUILT-IN DIODE | 35 ns | -1V | 660mW Ta | 16.7A | SWITCHING | 0.0086Ohm | 115 ns | SILICON | P-Channel | 8m Ω @ 7A, 4.5V | 1V @ 250μA | 6900pF @ 10V | 180nC @ 8V | 40ns | 35 ns | 8V | 20V | 7.7A Ta | 80A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3426EV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | 5W Tc | 0.042Ohm | 60V | SILICON | N-Channel | 42m Ω @ 5A, 10V | 2.5V @ 250μA | 720pF @ 30V | 12nC @ 4.5V | 7A | 7A Tc | 60V | 70 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | -6.7A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 500mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.7W | 11 ns | 500mOhm | D2PAK | 3.7W Ta 43W Tc | -6.7A | 10 ns | P-Channel | 500mOhm @ 4A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | 60V | -4 V | 6.7A Tc | 60V | 270pF | 10V | ±20V | 500 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI620GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.63mm | ROHS3 Compliant | Lead Free | 4.1A | No | 3 | TO-220-3 Full Pack, Isolated Tab | No SVHC | 9.8mm | 4.83mm | 800mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 3 | 1 | 1 | TO-220AB | Single | 30W | 7.2 ns | 4V | 30W Tc | 300 ns | 4.1A | SWITCHING | 2.5kV | 19 ns | SILICON | N-Channel | 800m Ω @ 2.5A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 22ns | 13 ns | 20V | 200V | 200V | 4 V | 4.1A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHP15N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 4V | 156W Tc | 14.5A | SWITCHING | 0.28Ohm | SILICON | N-Channel | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 1162pF @ 100V | 66nC @ 10V | 500V | 14.5A Tc | 28A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tube | 2009 | Active | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.08mm | 9.65mm | 850mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.1W | 14 ns | 2V | 850mOhm | D2PAK | 3.1W Ta 125W Tc | 8A | 150°C | 49 ns | N-Channel | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 1300pF @ 25V | 63nC @ 10V | 23ns | 20 ns | 20V | 500V | 500V | 4 V | 8A Tc | 500V | 1.3nF | 10V | ±20V | 850 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2009 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 11A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 520mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 170W | 14 ns | 4V | 520mOhm | TO-220AB | 170W Tc | 11A | 32 ns | N-Channel | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 1423pF @ 25V | 52nC @ 10V | 35ns | 28 ns | 30V | 500V | 4 V | 11A Tc | 500V | 1.423nF | 10V | ±30V | 520 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| IRFD9020PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 280mOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | Other Transistors | 1 | Single | 1.3W | 13 ns | -4V | 1.3W Ta | 1.6A | SWITCHING | 15 ns | SILICON | P-Channel | 280m Ω @ 960mA, 10V | 4V @ 1μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | 60V | 1.6A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z34GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 175°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | -12A | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 140mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 42W | 18 ns | -4V | 140mOhm | TO-220-3 | 42W Tc | -12A | 20 ns | P-Channel | 140mOhm @ 7.2A, 10V | 4V @ 250μA | 1100pF @ 25V | 34nC @ 10V | 120ns | 58 ns | 20V | -60V | -4 V | 12A Tc | 60V | 1.1nF | 10V | ±20V | 140 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| IRFP140PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1998 | Active | 1 (Unlimited) | 175°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 31A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 77mOhm | Through Hole | 38.000013g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 180W | 11 ns | 4V | 77mOhm | TO-247-3 | 180W Tc | 31A | 53 ns | N-Channel | 77mOhm @ 19A, 10V | 4V @ 250μA | 1700pF @ 25V | 72nC @ 10V | 44ns | 43 ns | 20V | 100V | 4 V | 31A Tc | 100V | 1.7nF | 10V | ±20V | 77 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SIHP20N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 17 ns | 4V | 179W Tc | 19A | SWITCHING | 500V | 48 ns | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 27ns | 25 ns | 20V | 19A Tc | 500V | 42A | 204 mJ | 10V | ±30V |