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  • IRFD9220PBF

IRFD9220PBF

MOSFET P-CH 200V 0.56A 4-DIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFD9220PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 409
  • Description: MOSFET P-CH 200V 0.56A 4-DIP (Kg)

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Shipping Cost

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Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -560mA
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 8.8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 560mA Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) -560mA
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 340pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Height 3.37mm
Length 6.29mm
Width 5mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet