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  • IRFH3702TRPBF

IRFH3702TRPBF

IRFH3702TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH3702TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 819
  • Description: IRFH3702TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.1m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0071Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 120A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 77 mJ
Nominal Vgs 1.8 V
Height 939.8μm
Length 2.9972mm
Width 2.9972mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet