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  • IRFH3707TRPBF

IRFH3707TRPBF

IRFH3707TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH3707TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 337
  • Description: IRFH3707TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 29A Tc
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V
Rise Time 10.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.7 ns
Turn-Off Delay Time 8.7 ns
Continuous Drain Current (ID) 12mA
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 12 Weeks
Drain Current-Max (Abs) (ID) 12A
Mount Surface Mount
Drain to Source Breakdown Voltage 30V
Mounting Type Surface Mount
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 13 mJ
Package / Case 8-PowerVDFN
Nominal Vgs 1.8 V
Number of Pins 8
Height 950μm
Length 3mm
Transistor Element Material SILICON
Width 3mm
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
Packaging Tape & Reel (TR)
REACH SVHC No SVHC
Published 2010
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 12.4MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
See Relate Datesheet