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  • IRFH5006TR2PBF

IRFH5006TR2PBF

MOSFET N-CH 60V 100A 5X6 PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH5006TR2PBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 256
  • Description: MOSFET N-CH 60V 100A 5X6 PQFN (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4175pF @ 30V
Current - Continuous Drain (Id) @ 25°C 21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 4.175nF
Recovery Time 42 ns
Drain to Source Resistance 4.1mOhm
Rds On Max 4.1 mΩ
Nominal Vgs 4 V
Height 990.6μm
Length 6.1468mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet