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  • IRFH5025TRPBF

IRFH5025TRPBF

INFINEON IRFH5025TRPBF MOSFET Transistor, N Channel, 25 A, 250 V, 0.084 ohm, 10 V, 5 VNew


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH5025TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 509
  • Description: INFINEON IRFH5025TRPBF MOSFET Transistor, N Channel, 25 A, 250 V, 0.084 ohm, 10 V, 5 VNew (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 6.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 320 mJ
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet