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  • IRFH5220TRPBF

IRFH5220TRPBF

MOSFET N-CH 200V 3.8A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH5220TRPBF
  • Package: 8-VQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 118
  • Description: MOSFET N-CH 200V 3.8A PQFN (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99.9m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 4.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0999Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 47A
Avalanche Energy Rating (Eas) 290 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
See Relate Datesheet