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  • IRFH5250DTRPBF

IRFH5250DTRPBF

MOSFET N-CH 25V 40A 8VQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH5250DTRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 505
  • Description: MOSFET N-CH 25V 40A 8VQFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.4MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6115pF @ 13V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Rise Time 72ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 470 mJ
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet