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  • IRFH6200TRPBF

IRFH6200TRPBF

IRFH6200TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH6200TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 786
  • Description: IRFH6200TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.95m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 1.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 49A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V
Rise Time 74ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 45A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 400A
See Relate Datesheet