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  • IRFH7110TRPBF

IRFH7110TRPBF

MOSFET N CH 100V 11A PQFN 5X6


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH7110TRPBF
  • Package: 8-TQFN Exposed Pad
  • Datasheet: PDF
  • Stock: 369
  • Description: MOSFET N CH 100V 11A PQFN 5X6 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.6W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Pulsed Drain Current-Max (IDM) 240A
Nominal Vgs 3 V
Height 1.17mm
Length 5.85mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet