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  • IRFH7185TRPBF

IRFH7185TRPBF

IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH7185TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 761
  • Description: IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 3.6V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 9.9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.9 ns
Factory Lead Time 16 Weeks
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 19A
Mount Surface Mount
Threshold Voltage 3.6V
Gate to Source Voltage (Vgs) 20V
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.0052Ohm
Package / Case 8-PowerTDFN
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 260A
Number of Pins 8
Avalanche Energy Rating (Eas) 360 mJ
Max Junction Temperature (Tj) 150°C
Transistor Element Material SILICON
Height 950μm
Length 6.15mm
Width 5.15mm
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
REACH SVHC No SVHC
Packaging Tape & Reel (TR)
RoHS Status RoHS Compliant
Published 2008
Lead Free Lead Free
Series FASTIRFET™, HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number IRFH7185
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 50A, 10V
See Relate Datesheet